| PART |
Description |
Maker |
| UF2840P |
RF Power MOSFET Transistor 40W, 100-500 MHz, 28V
|
M/A-COM Technology Solutions, Inc.
|
| UF2840G |
RF Power MOSFET Transistor 40W, 100-500 MHz, 28V
|
M/A-COM Technology Solutions, Inc.
|
| STK433-040-E |
2-channel class AB audio power IC, 40W 40W
|
Sanyo Semicon Device
|
| NTE320F NTE320 |
Silicon NPN RF Power Transistor 40W @ 175MHz
|
NTE Electronics, Inc.
NTE[NTE Electronics]
|
| NTE480 |
Silicon NPN Transistor RF Power Output for Broadband Amp, PO = 40W @ 512MHz
|
NTE[NTE Electronics]
|
| BD242 BD242C BD241 BD241A BD241B BD241C BD242A BD2 |
POWER TRANSISTORS(3A,40W) 功率晶体管（3A，功0W
POWER TRANSISTORS(3A/40W)
|
Mospec Semiconductor, Corp.
MOSPEC[Mospec Semiconductor]
|
| 2SD1062 SD1062 |
POWER TRANSISTORS(12A,50V,40W) 功率晶体管（12A0V，功0W
POWER TRANSISTORS(12A/50V/40W)
|
Mospec Semiconductor, Corp.
MOSPEC[Mospec Semiconductor]
|
| 2SB826 2SB826R |
TRANSISTOR | BJT | PNP | 50V V(BR)CEO | 12A I(C) | TO-220AB
POWER TRANSISTORS(12A,50V,40W)
|
MOSPEC SEMICONDUCTOR CORP.
MOSPEC[Mospec Semiconductor]
|
| M57788 M57788H |
450-470MHz / 12.5V / 40W / FM MOBILE RADIO
MITSUBISHI RF POWER MODULE 450-470MHz, 12.5V, 40W, FM MOBILE RADIO
|
Mitsubishi Electric Corporation
|
| ILA03N60 Q67040-S4625 ILB03N60 Q67040-S4626 Q67040 |
3A / 600V IGBT with monolithically integrated diode for resonant-halfbridge topologies in lighting ballast (40W-120W)
From old datasheet system
High Speed CMOS Logic Hex Non-Inverting Buffers 16-SO -55 to 125 LightMOS功率晶体
LightMOS Power Transistor LightMOS功率晶体
|
Infineon Technologies A...
INFINEON[Infineon Technologies AG]
|
| 2N6292 |
POWER TRANSISTORS(7A,40W)
|
Mospec Semiconductor
|
| STK4032X |
AF Power Amplifier (Split Power Supply) (40W min, THD = 0.008%)
|
SANYO[Sanyo Semicon Device]
|
